| 描述 | IGBT 晶体管 | 栅极/发射极最大电压 | +/- 20 V |
|---|---|---|---|
| 栅极—射极漏泄电流 | 250 nA | 功率耗散 | 291 W |
| 最大工作温度 | + 150 C | 封装 / 箱体 | TO-247-3 |
| 集电极最大连续电流 Ic | 75 A | 最小工作温度 | - 55 C |
| 安装风格 | Through Hole |
【Fairchild Semiconductor】HGTG5N120BND,IGBT NPT N-CH 1200V 21A TO-247
【Fairchild Semiconductor】HGTG7N60A4,IGBT N-CH SMPS 600V 34A TO247
【Fairchild Semiconductor】HGTG7N60A4D,IGBT N-CH SMPS 600V 34A TO247
【Fairchild Semiconductor】HGTG7N60A4D_Q,IGBT 晶体管 600V N-Ch IGBT SMPS Series HF
【Fairchild Semiconductor】HGTP10N120BN,IGBT NPT N-CH 1200V 35A TO-220AB
【Fairchild Semiconductor】HGTP12N60A4,IGBT N-CH SMPS 600V 54A TO220AB
【Fairchild Semiconductor】HGTP12N60A4D,IGBT N-CH SMPS 600V 54A TO220AB