| 描述 | Transistors Bipolar (BJT) Vceo=-50V Vds20V Ic=-100ma Id=50mA | 直流集电极/Base Gain hfe Min | 120 |
|---|---|---|---|
| 配置 | Dual | 安装风格 | Through Hole |
| 封装 / 箱体 | ES-6 | 封装 | Reel |
| 集电极连续电流 | - 100 mA | 功率耗散 | 100 mW |
| 工厂包装数量 | 4000 |
HN7G02FU(TE85L,F),Transistors Bipolar (BJT) Vceo=-50V Vds=20V Ic=-100mA Id=50mA
HN7G03FU-B(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=100mA
HN7G04FU-A(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vceo=50V 10K x 47Kohms
HN7G05FU(TE85L,F),Transistors Bipolar (BJT) Vceo=-50V Vds=20V Ic=-100ma Id=50mA
HN7G06FE-A(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vceo=50V Ic=-400mA IC=100mA
HN7G06FU-A(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vceo=50V 47K x 47Kohms
HN7G08FE-A(TE85L,F,Transistors Bipolar (BJT) Vceo=-12V Vceo=50V Ic=-400mA IC=100mA
HN7G09FE(TE85L,F),Transistors Bipolar (BJT) Vceo=50V Vds=30V Ic=100mA Id=100mA