| 描述 | Transistors Bipolar (BJT) | 直流集电极/Base Gain hfe Min | 30 |
|---|---|---|---|
| 最大工作频率 | 18 MHz | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-3P |
| 封装 | Rail | 功率耗散 | 100000 mW |
【Fairchild Semiconductor】KSC5026MO,Transistors Bipolar (BJT) TO-126
【Fairchild Semiconductor】KSC5026MOS,TRANSISTOR NPN 800V 1.5A TO-126
【Fairchild Semiconductor】KSC5026MOSTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5026MOTU,Transistors Bipolar (BJT) TO-126
【Fairchild Semiconductor】KSC5027FO,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5027FOTU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSC5027FR,Transistors Bipolar (BJT)