| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 30 at 8 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 620 MHz |
| 最大工作温度 | + 135 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | 0.1 A | 最小工作温度 | - 55 C |
| 功率耗散 | 350 mW |
【Fairchild Semiconductor】KSP25BU,TRANSISTOR NPN 40V 500MA TO-92
【Fairchild Semiconductor】KSP25BU_Q,Transistors Darlington NPN Si Transistor Epitaxial Darlington
【Fairchild Semiconductor】KSP25TA,TRANSISTOR NPN 40V 500MA TO-92
【Fairchild Semiconductor】KSP26BU,TRANSISTOR NPN 50V 500MA TO-92
【Fairchild Semiconductor】KSP26BU_Q,Transistors Darlington NPN Si Transistor Epitaxial Darlington
【Fairchild Semiconductor】KSP26TA,TRANSISTOR NPN 50V 500MA TO-92
【Fairchild Semiconductor】KSP27BU,TRANSISTOR NPN 60V 500MA TO-92
【Fairchild Semiconductor】KSP27BU_Q,Transistors Darlington NPN Si Transistor Epitaxial Darlington