| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 40 at 1 mA at 10 V |
|---|---|---|---|
| 配置 | Single | 最大工作温度 | + 150 C |
| 安装风格 | Through Hole | 封装 / 箱体 | TO-92 |
| 封装 | Ammo | 集电极连续电流 | 0.3 A |
| 最小工作温度 | - 55 C | 功率耗散 | 625 mW |
【Fairchild Semiconductor】KSP45TAM,Transistors Bipolar (BJT) DISC BY MFG 2/02
【Fairchild Semiconductor】KSP45TF,TRANSISTOR NPN 350V 300MA TO-92
【Fairchild Semiconductor】KSP5179BU,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSP5179TA,TRANSISTOR NPN 12V 50MA TO-92
【Fairchild Semiconductor】KSP5179TA_Q,Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
【Fairchild Semiconductor】KSP5179TF,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSP55TA,TRANSISTOR PNP 60V 500MA TO-92