| 描述 | Transistors Bipolar (BJT) NPN Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 25 at 3 mA at 1 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 2000 MHz |
| 最大工作温度 | + 150 C | 安装风格 | Through Hole |
| 封装 / 箱体 | TO-92 | 封装 | Ammo |
| 集电极连续电流 | 0.05 A | 最小工作温度 | - 55 C |
| 功率耗散 | 200 mW |
【Fairchild Semiconductor】KSP5179TF,Transistors Bipolar (BJT)
【Fairchild Semiconductor】KSP55TA,TRANSISTOR PNP 60V 500MA TO-92
【Fairchild Semiconductor】KSP55TA_Q,Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
【Fairchild Semiconductor】KSP56BU,TRANSISTOR PNP 80V 500MA TO-92
【Fairchild Semiconductor】KSP56TA,TRANSISTOR PNP 80V 500MA TO-92
【Fairchild Semiconductor】KSP56TA_Q,Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
【Fairchild Semiconductor】KSP56TF,TRANSISTOR PNP 80V 500MA TO-92