| 描述 | Transistors Bipolar (BJT) PNP Si Transistor Epitaxial | 直流集电极/Base Gain hfe Min | 50 at 1 mA at 5 V |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 300 MHz |
| 最大工作温度 | + 150 C | 安装风格 | SMD/SMT |
| 封装 / 箱体 | SOT-23 | 封装 | Reel |
| 集电极连续电流 | - 0.5 A | 功率耗散 | 350 mW |
【Fairchild Semiconductor】KST5550MTF,TRANSISTOR NPN 140V 600MA SOT-23
【Fairchild Semiconductor】KST5551MTF,TRANSISTOR NPN 160V 600MA SOT-23
【Fairchild Semiconductor】KST5551MTF_Q,Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
【Fairchild Semiconductor】KST55MTF,TRANSISTOR PNP 60V 500MA SOT-23
【Fairchild Semiconductor】KST55MTF_Q,Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
【Fairchild Semiconductor】KST56MTF,TRANSISTOR PNP 80V 500MA SOT-23
【Fairchild Semiconductor】KST56MTF_Q,Transistors Bipolar (BJT) PNP Si Transistor Epitaxial
