描述 | Transistors Bipolar (BJT) PNP Transistor Low Saturation | 直流集电极/Base Gain hfe Min | 70 |
---|---|---|---|
配置 | Single Dual Collector | 最大工作频率 | 75 MHz |
最大工作温度 | + 150 C | 安装风格 | SMD/SMT |
封装 / 箱体 | SOT-223 | 封装 | Reel |
集电极连续电流 | 3 A | 最小工作温度 | - 55 C |
功率耗散 | 2 W |
【Fairchild Semiconductor】NZT660A_Q,Transistors Bipolar (BJT) PNP Transistor Low Saturation
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