| 描述 | MOSFET USE 512-FDP6030BL Logic Level N-Ch | 电阻汲极/源极 RDS（导通） | 0.042 Ohms |
|---|---|---|---|
| 安装风格 | Through Hole | 封装 / 箱体 | TO-220AB |
| 封装 | Tube | 功率耗散 | 35 W |
| 工厂包装数量 | 400 |
【Fairchild Semiconductor】HUF76113DK8T,MOSFET USE 512-FDS6912A Logic Level N-Ch
【Fairchild Semiconductor】HUF76113SK8,MOSFET 6.5a 30V .0.030Ohm Logic Level N-Ch
【Fairchild Semiconductor】HUF76113SK8T,MOSFET USE 512-FDS6612A Logic Level N-Ch
【Fairchild Semiconductor】HUF76113T3ST,MOSFET 4.7a 30V 0.031 Ohm Logic Level N-Ch
【Fairchild Semiconductor】HUF76121D3,MOSFET 20a 30V N-Ch Logic Level 0.023Ohm
【Fairchild Semiconductor】HUF76121D3ST,MOSFET USE 512-FDD6612A Logic Level N-Ch