| 描述 | Transistors Bipolar (BJT) PNP Epitaxial Transistor | 直流集电极/Base Gain hfe Min | 135 |
|---|---|---|---|
| 配置 | Single | 最大工作频率 | 110 MHz |
| 最大工作温度 | + 150 C | 安装风格 | SMD/SMT |
| 封装 / 箱体 | SOT-89 | 封装 | Reel |
| 集电极连续电流 | - 1 A | 最小工作温度 | - 55 C |
| 功率耗散 | 2 W |
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